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Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D-Applied Physics
  • 时间：0
  • 页码：23010-23015
  • 语言：英文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： Z. S.|S. M.|S.|Sun|X.|J. J.|D. S.|D. G.|Zhang|W. B.|Jiang|Wang|Y. T.|Zhao|H.|Zhu|Liu|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
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