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Defect evolution and accompanied change of electrical properties during the GaN growth by metalorgan
  • ISSN号：0925-8388
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：0
  • 页码：400-403
  • 语言：英文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： Z. S.|D. G.|Zhao|Wang|Hui|Y. T.|X.|S. M.|Zhu|Liu|Guo|Zhang|D. S.|Yang|J. J.|Jiang|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
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