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A new p-n structure ultraviolet photodetector with p(-)-GaN active region
  • ISSN号：1000-3290
  • 期刊名称：物理学报
  • 时间：0
  • 页码：7255-7260
  • 语言：中文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： Zhao De-Gang|Zhou Mei|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
同项目期刊论文
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Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) s
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN
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Abnormal photoabsorption in high resistance GaN epilayer
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Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Mult
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature
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Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films
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An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
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高阻氮化镓外延层的异常光吸收
p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响
Time delay in InGaN multiple quantum well laser diodes at room temperature
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si （111） substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Thermal analysis of GaN laser diodes in a package structure
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国科学引文索引（扩展库）,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:49876