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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic c
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：0
  • 页码：5266-5269
  • 语言：英文
  • 相关项目：位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
作者： S. M.|U.|K. H.|Zhao|Jiang|Yang|Zhang|Ploog|D. G.|J. J.|Liu|Jahn|Z. S.|D. S.|Zhu|Hui|
同期刊论文项目
位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理
期刊论文 56 专利 4
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