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Investigation of the OFF-State Behavior in Deep-Submicrometer NMOSFETs Under Heavy-Ion Irradiation b
  • ISSN号：1530-4388
  • 期刊名称：IEEE Transactions on Device and Materials Reliabil
  • 时间：2011
  • 页码：13-18
  • 相关项目：硅基纳米尺度新结构器件
作者： Shoubin Xue|Pengfei Wang|Ru Huang|Xing Zhang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
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