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Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping
  • ISSN号：0093-3813
  • 期刊名称：IEEE Transactions on Plasma Science
  • 时间：2010.9.9
  • 页码：2353-2358
  • 相关项目：硅基纳米尺度新结构器件
作者： Min Yu|Huihui Ji|Jinyan Wang|Yufeng Jin|Ru Huang|Xing Zhang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
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