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Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann
  • ISSN号：1536-125X
  • 期刊名称：IEEE Transactions on Nanotechnology
  • 时间：2013
  • 页码：168-173
  • 相关项目：硅基纳米尺度新结构器件
作者： Gai Liu|Gang Du|Tiao Lu|Xiaoyan Liu|Pingwen Zhang|Xing Zhang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
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