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Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 分类：TN307[电子电信—物理电子学] TS193.845[轻工技术与工程—纺织化学与染整工程;轻工技术与工程—纺织科学与工程]
  • 作者机构：[1]Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China
  • 相关基金：Project supported by the National Basic Research Program of China （Grant No. 201 ICBA00601）, the National Science and Technology Major Project of the Ministry of Science and Technology of China （Grant No. 2009ZX02035-001）, and the National Natural Science Foundation of China （Grant Nos. 60625403, 60806033, and 60925015）. The authors would like Nano-tech and Nano-bionics support. to thank the Suzhou Institute of （SINANO） for the process ＆ test
作者： 云全新[1], 黎明[1], 安霞[1], 林猛[1], 刘朋强[1], 李志强[1], 张冰馨[1], 夏宇轩[1], 张浩[1], 张兴[1], 黄如[1], 王阳元[1]
关键词： 界面陷阱密度, 氮等离子体, MOS电容, 钝化, MOSFET, 界面层厚度, 表面粗糙度, 等效氧化层厚度, germanium, roughness, interface trap density, interfacial layer thickness
中文摘要：

Corresponding author. E-mail： liming.ime@pku.edu.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406