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Comparison and improvement of two core compact models for double-gate MOSFETs
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：2010
  • 页码：1444-1446
  • 相关项目：硅基纳米尺度新结构器件
作者： Xingye Zhou|Zhize Zhou|Jian Zhang|Linging Zhang|Chenyue Ma|Jin He|Xing Zhang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
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