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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implant
  • ISSN号：7413-106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2013
  • 页码：1097-1099
  • 相关项目：硅基纳米尺度新结构器件
作者： Zhiqiang Li|Xia An|Quanxin Yun|Meng Lin|Min Li|Ming Li|Xing Zhang|Ru Huang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
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