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Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Tec
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2012.12.12
  • 页码：1687-1688
  • 相关项目：硅基纳米尺度新结构器件
作者： Zhiqiang Li|Xia An|Min Li|Quanxin Yun|Meng Lin|Ming Li|Xing Zhang|Ru Huang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
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