位置：成果数据库 > 期刊 > 期刊详情页
A physical based model to predict performance degradation of FinFET accounting for interface state d
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2011.2.2
  • 页码：337-341
  • 相关项目：硅基纳米尺度新结构器件
作者： Chenyue Ma|Lining Zhang|Chenfei Zhang|Xiufang Zhang|Jin He|Xing Zhang|
同期刊论文项目
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
同项目期刊论文
Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment f
Impact of the displacement damage in channel and source/drain regions on the DC characteristics degr
Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann
Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation
Graphene-Based Inductors: Fabrication and Performance
Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Tec
Novel single-loop multi-bit sigma-delta modulator using OTA sharing technique without DEM
LDMOS–SCR: a replacement for LDMOS with high ESD self-protection ability for HV application
A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negati
A SPICE model for a phase-change memory cell based on the analytical conductivity model
Multiregion DCIV: A Sensitive Tool for Characterizing the Si/SiO2 Interfaces in LDMOSFETs
Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping
Investigation of the OFF-State Behavior in Deep-Submicrometer NMOSFETs Under Heavy-Ion Irradiation b
An improvement to computational efficiency of the drain current model for double-gate MOSFET
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implant
Comparison and improvement of two core compact models for double-gate MOSFETs
Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation techni
Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment
Gate-Modulated Photoresponse in Graphene Field-Effect Transistors
Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs
Vertical assembly of carbon nanotubes for via interconnects
An improved single-loop sigma-delta modulator for GSM applications
改进的基于GSM标准二阶多位噪声耦合过采样调制器
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack