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中文摘要：
采用射频磁控溅射法在室温下沉积了N-GST相变薄膜,利用原位XRD研究了其相变过程.结果表明：室温下沉积薄膜均为非晶态,且在室温～375℃温度范围内,纯GST薄膜发生了非晶态→立方晶态→六方晶态相转变;然而,当N2流量为12.8 sccm时,N掺杂GST薄膜则发生了非晶态→六方晶态直接相转变.此外,通过原位XRD确定结晶温度,表明N引入能够显著提高GST薄膜的结晶温度,这有利于提高相变薄膜的非晶热稳定性.
英文摘要：
N-doped Ge2Sb2Te5 films were prepared by RF magnetron sputtering method at room temperature,and their structural evolution was investigated by in-situ X-ray diffraction method. It confirmed that the asdeposited films were amorphous. With increasing temperature to 375 ℃,the phase transition of undoped GST film went through three states,amorphous→cubic→hexagonal. At the N2 gas flow rate of 12. 8sccm,however,N incorporation lead an amorphous → hexagonal phase transition. In addition,the crystallization temperature increased by N incorporation,which also help to improve the thermal stability of the amorphous films.
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