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具有p型埋层PSOI结构的耐压分析
  • 期刊名称：半导体学报,2005,26(11):2149-2153
  • 时间：0
  • 相关项目：单片功率系统集成（PSoC）的基础理论和技术研究
同期刊论文项目
单片功率系统集成（PSoC）的基础理论和技术研究
期刊论文 90
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有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制
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背栅效应对SOI横向高压器件击穿特性的影响
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New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI
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