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一种新的基于E-SIMOX衬底的PSOI高压器件
  • ISSN号：1000-3819
  • 期刊名称：《固体电子学研究与进展》
  • 时间：0
  • 分类：TN304.055[电子电信—物理电子学] TM855[电气工程—高电压与绝缘技术]
  • 作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China, [2]College of Communication Engineering, ChengduUniversity of Information Technology, Chengdu 610225, China, [3]College of Communication Engineering, Chongqing University, Chongqing 400044, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60806025 and 60976060）, the Fund of the National Laboratory of Analog Integrated Circuit （Grant No. 9140C0903070904）, and the Youth Teacher Foundation of the University of Electronic Science and Technology of China （Grant No. jx0721）.
作者： 吴丽娟[1,2], 胡盛东[1], 张波[1], 李肇基[1]
关键词： 高电压设备, SIMOX, P沟道, 金属氧化物半导体, LDMOS, 平方, 衬底, 传统设备, dielectric buried layer, breakdown voltage, self-adapted holes, epitaxy-SIMOX
中文摘要：

Corresponding author. E-mail： ljwu@cuit.edu.cn

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期刊信息
  • 《固体电子学研究与进展》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:南京电子器件研究所
  • 主编：杨乃彬
  • 地址：南京中山东路524号(南京160信箱43分箱)
  • 邮编：210016
  • 邮箱：gtdz@chinajournal.net.cn
  • 电话：025-86858161
  • 国际标准刊号：ISSN：1000-3819
  • 国内统一刊号：ISSN：32-1110/TN
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵双效期刊,江苏省第六届优秀期刊,工信部09-10年期刊编辑质量优秀奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,中国中国科技核心期刊,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:2461