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Analysis of back-gate effect on breakdown behaviour of over 600V SOI LDMOS transistors
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  • 相关项目：单片功率系统集成（PSoC）的基础理论和技术研究
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单片功率系统集成（PSoC）的基础理论和技术研究
期刊论文 90
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Unified breakdown model of SOI RESURF device with uniform/ step/ linear doping profile
复合介质层SOI高压器件电场分布解析模型
New CMOS compatible super junction LDMOST with N-type buried layer
电荷非平衡super junction 结构电场分布
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On-state breakdown model for high voltage RESRURF LDMOS
有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制
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功率VDMOS器件的ESD瞬态模型
Output characteristics of n-buried-pSOI sandwiched rf power LDMOS
A novel double RESURF LDMOS and a versatile JFET device usedas internal power supply and current det
SOI high-voltage device with step thickness sustained voltage layer
高散热变k介质埋层SOI高压功率器件
可变低k介质层SOI高压器件耐压特性
屏蔽槽SOI高压器件新结构和耐压机理
部分局域电荷槽SOI高压器件新结构
New lateral super junction mosfets with n+-floating layer on high-resistance substrate
A high voltage BCD process using thin epitaxial technology
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一种基于负载状态的分段式PSM调制模式
带P埋层表面注入硅基LDMOS模型与优化
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具有N+浮空层的体电场降低(Rebulf) LDMOS结构耐压分析
阶梯埋氧型SOI结构的耐压分析
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背栅效应对SOI横向高压器件击穿特性的影响
An ultra-low specific on-resistance VDMOS with a step oxide-bypassed trench structure
双面阶梯埋氧层部分SOI高压器件新结构
New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI
A new structure and its analytical model for the electric field and breakdown voltage of SOI high vo
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基于耦合式电平位移结构的高压集成电路
New power lateral double diffused metal-oxide-semiconductor transistor with a folded accumulation la
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断续导通模式Buck变换器离散解析模型
埋空隙PSOI结构的耐压分析
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智能型高压SENSFET器件的设计分析和实现
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