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表面注入P-top区double RESURF功率器件表面电场模型
  • 期刊名称：物理学报,2007,56(11):6660-6665
  • 时间：0
  • 相关项目：单片功率系统集成（PSoC）的基础理论和技术研究
同期刊论文项目
单片功率系统集成（PSoC）的基础理论和技术研究
期刊论文 90
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Unified breakdown model of SOI RESURF device with uniform/ step/ linear doping profile
复合介质层SOI高压器件电场分布解析模型
New CMOS compatible super junction LDMOST with N-type buried layer
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不同调制模式下Boost变换器DCM模态的能量模型与稳定性分析
On-state breakdown model for high voltage RESRURF LDMOS
有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制
局域寿命控制NPT-IGBT 瞬态模型
功率VDMOS器件的ESD瞬态模型
Output characteristics of n-buried-pSOI sandwiched rf power LDMOS
A novel double RESURF LDMOS and a versatile JFET device usedas internal power supply and current det
Analysis of back-gate effect on breakdown behaviour of over 600V SOI LDMOS transistors
SOI high-voltage device with step thickness sustained voltage layer
高散热变k介质埋层SOI高压功率器件
可变低k介质层SOI高压器件耐压特性
屏蔽槽SOI高压器件新结构和耐压机理
部分局域电荷槽SOI高压器件新结构
New lateral super junction mosfets with n+-floating layer on high-resistance substrate
A high voltage BCD process using thin epitaxial technology
New high voltage SOI device with variable-thickness drift region and its optimization
A novel 700-V SOI LDMOS with double-side trench
New thin-film power MOSFETs with a buried oxide double step structure
Realization of High Voltage (>700V) in New SOI Devices with a Compound Buried-Layer
A novel 1200-V LDMOSFET with floating buried layer in substrate
A novel high voltage LDMOS for HVIC with the multiple step shaped equipotential rings
A new SOI high voltage device with a step thickness drift region and its analytical model for the el
一种基于负载状态的分段式PSM调制模式
带P埋层表面注入硅基LDMOS模型与优化
在SOI基上设计实现D/A驱动的高压LDMOS开关电路
具有N+浮空层的体电场降低(Rebulf) LDMOS结构耐压分析
阶梯埋氧型SOI结构的耐压分析
具有P型埋PSOI结构的耐压分析
阶梯掺杂薄漂移区 RESURF LDMOS耐压模型
双面阶梯埋氧型SOI结构的耐压分析
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SOI基双极RESURF二维解析模型
Optimization of super-junction SOI-LDMOS with a step doping surface implanted layer
A 1.8-V 0.7 ppm℃ high order temperature-compensated CMOS current reference
A new analytical model for optimizing SOI LDMOS with step doped drift region
Longitudinal junction termination technique by multiple floating buried-layers for LDMOST
A New analytical model of high voltage SOI thin film devices
非均匀沟道MOS辐照正空间电荷迁移率模型
非均匀寿命分布电导调制基区中非平衡载流子的WKB解
Energy model and stability analysis of PSM converter in DCM
REBULF LDMOS实验结果及具有部分N浮空层结构的分析
具有非平面埋氧层的新型SOI材料的制备
具有高压互连线的多区双RESURF LDMOS击穿特性
单密勒电容补偿的三级误差运放电路
全耗尽型浮空埋层LDMOS的耐压特性
Boost变换器跨周期调制(PSM)的状态空间平均模型
背栅效应对SOI横向高压器件击穿特性的影响
An ultra-low specific on-resistance VDMOS with a step oxide-bypassed trench structure
双面阶梯埋氧层部分SOI高压器件新结构
New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI
A new structure and its analytical model for the electric field and breakdown voltage of SOI high vo
A dual complex pole-zero cancellation frequency compensation with gain-enhanced stage for three-stag
Thermal analytic model of current gain for Bipolar Junction Transistor-Bipolar Static Induction Tran
A novel super-junction lateral double-diffused metal–oxide–semiconductor field effect transistor wit
An analytical model for the surface electrical field distribution and optimization of bulk-silicon d
Realizing high breakdown voltage SJ-LDMOS on bulk silicon using a partial n-buried layer
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power t
基于耦合式电平位移结构的高压集成电路
New power lateral double diffused metal-oxide-semiconductor transistor with a folded accumulation la
A new partial SOI power device struture with P-type buried layer
断续导通模式Buck变换器离散解析模型
埋空隙PSOI结构的耐压分析
断续导通模式Buck变换器跨周期调制离散解析模型
An advanced monolithic digitalized random carrier frequency spread-spectrum clock generator for EMI suppression
智能型高压SENSFET器件的设计分析和实现
基于薄外延技术的高压BCD兼容工艺
非均匀厚度漂移区SOI高压器件及其优化设计
高阻衬底上具有n^＋浮空层的横向Super Junction MOSFETs
具有部分n埋层的高压SJ-LDMOS器件新结构
可变低κ介质层SOI LDMOS高压器件的耐压特性
一种自适应斜坡补偿电路
一种新的基于E-SIMOX衬底的PSOI高压器件
薄硅层阶梯埋氧PSOI高压器件新结构
A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device
A Novel Super-junction LDMOST Concept with Split p Columns