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中文摘要：
提出具有p埋层的1200V多区双RESURF（MR D-RESURF）LDMOS，在单RESURF（S-RESURF）结构的n漂移区表面引入多个p掺杂区，并在源区下引入p埋层，二者的附加场调制器件原来的场，以改善其场分布；同时由于电荷补偿，提高了漂移区n型杂质的浓度，降低了导通电阻．开发1200V高压BCD（BJT，CMOS，DMOS）兼容工艺，在标准CMOS工艺的基础上增加pn结对通隔离，用于形成DMOS器件D—RESURF的p—top注入两步工序，实现了BJT，CMOS与高压DMOS器件的单片集成．应用此工艺研制出一种BCD单片集成的功率半桥驱动电路，其中LDMOS，nMOS，pMOS，npn的耐压分别为1210，43．8，-27和76V．结果表明，此兼容工艺适用于高压领域的电路设计中。
英文摘要：
A 1200V multi-region double RESURF LDMOS with a p-type buried layer,which has multiple p regions in the n- drift layer of a single RESURF structure is proposed for improving the surface electric field,increasing the concentration of the n-drift layer,and reducing the on-resistance of LDMOS. A 1200V BCD technology based on standard CMOS technology is realized by adding pn isolation and p-top implantation. Using this technology we develop a power half bridge driver. The breakdown voltages of the LDMOS,nMOS, and pMOS are 1210,43.8, and - 27V,respectively, the BVceo of the npn is 76V in the driver. The 1200V BCD technology thus can be used in the design of HVIC.
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