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A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN303[电子电信—物理电子学] TL811.1[核科学技术—核技术及应用]
  • 作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60436030 and 60806025）.
作者： 胡盛东[1], 张波[1], 李肇基[1], 罗小蓉[1]
关键词： 纵向电场, 垂直界面, 高压器件, 器件结构, 解析模型, SOI, 口部, LDMOS, interface charges, breakdown voltage, partial-SOI, self-heating effect
中文摘要：

Corresponding author. E-mail： hushengdong@hotmail.com

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406