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中文摘要：
基于JFET原理,采用Double RESURF技术,对SENSFET的降场层注入剂量、始点位置和长度以及Nwell注入剂量等进行优化设计,得到了耐压730V、JFET线性区电阻为7.2×10^5Ω·μm的智能高压SENSFET器件，流片结果表明,器件宽度为75μm情况下,SENSFET的击穿电压为700V,线性区电阻为10kΩ，设计分析和实验结果吻合得很——借助该SENSFET器件可以很好地实现智能功率集成电路中高压器件的信号检测和电路的自供电功能。
英文摘要：
Based on the JFET theory, a smart, high-voltage SENSFET that adopts double RESURF is designed. The implant dose, the start point, the length of the lower electric field layer Pwell2, and the implant dose of Nwell are optimized,and thus we obtain a SENSFET with a breakdown voltage of 730V and a linear resistance of 7.2×10^5Ω·μm. The experimental results show that the breakdown voltage is 700V and the linear resistance is 10kΩ when the width of the SENSFET is 75μm. The experimental results agree with the numerical results. The SENSFET is used as the detector and self-supply of a smart power integrated circuit.
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