通过蓝宝石衬底的单面研磨试验研究,分析了W14和W3.5的B4C磨粒研磨后蓝宝石表面的微观形貌和宏观形貌,W14的B4C磨粒加工后蓝宝石表面微观裂纹密集且交错分布,体现了以滚轧和挤压为主的材料脆性去除作用,相同条件下,W3.5的B4C磨粒加工的蓝宝石表面划痕均匀,表面无微观裂纹,实现了以切削为主的材料延性去除形式。测试分析结果表明:磨粒粒径的选择对蓝宝石的研磨表面状态具有重要影响,其选择准则除考虑要达到的粗糙度等级之外,还必须同时考虑与研磨盘的嵌入作用及其对加工表面状态的影响;W3.5的B4C磨粒研磨加工后的蓝宝石表面宏观和微观均匀性良好,表面粗糙度、平面度等符合抛光前道工序的要求。
Experiments were taken to investigate the effect of abrasive grain size on the lapping u- niformity of sapphire wafer, macro and micro surface profiles were measured and compared by contact and contactless measurement methods. For W14 carbide boron abrasive lapping process, rolling and extruding effects are the main material removal process and leaves high density micro-crack on the lapped sapphire surface. On the other hand, W3.5 carbide boron abrasive grain performs a ductile cutting process for material remove process under the same operation parameters, only scratch on sapphire surface can be viewed by AFM. Experimental results show that abrasive grain size has a great effect on the surface integrity of the lapped sapphire, except the roughness to be achieved, the charging status of abrasive grain into the lapping plate and its effect on the surface integrity should be considered when choosing the abrasive grain size for precision lapping process. Lapping uniformity both for macro and micro level, roughness and flatness of sapphire wafer can be achieved by using W3.5 carbide boron abrasive grain and is acceptable by pre-polishing process.