为探究氮化硅陶瓷球化学机械抛光过程及磨料与工件材料的相互作用规律,选用四种不同的磨料对氮化硅陶瓷球进行了抛光实验。通过对抛光后表面粗糙度的检测,讨论了不同种类磨料对工件表面粗糙度的影响。利用SEM观测工件表面形貌,探讨了不同磨料对工件的材料去除方式。采用X射线衍射技术分析了水基CeO2磨料抛光氮化硅陶瓷球后工件表面的化学反应生成物,对化学机械抛光的热力学分析进行了验证,分析了其化学机械作用过程。结果表明,CeO2是抛光氮化硅陶瓷球非常有效的一种磨料,利用水基CeO2抛光液对氮化硅陶瓷球进行化学机械抛光,获得了表面粗糙度Ra为4nm的光滑表面。
To investigate the chemo-mechanical polishing process and the interaction between abrasive and workmaterial,experiments were carried out with four different abrasives.The roughness of the polished ball surface with different abrasive was discussed.The removal mode of workmaterial was also analyzed with obtained SEM images of Si3N4 ball surfaces.XRD was used to test the production of the chemo-reaction between abrasive and workmaterial.The test results are consistent with the theoretical thermodynamic analysis.The results herein show that the CeO2 is an effective abrasive to polishing Si3N4 balls,and an smooth surface with Ra 4nm is obtained in chemo-mechanical polishing.