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中文摘要：
为了实现对蓝宝石晶体的高效低损伤研磨加工,对蓝宝石晶体的双面研磨加工表面粗糙度、研磨均匀性和亚表面损伤层的深度进行实验研究。采用280#碳化硼磨粒双面研磨（0001）面蓝宝石晶体,考察了研磨时间对材料去除速率、表面粗糙度的作用规律,根据蓝宝石晶体切割表面状态确定了双面研磨的加工余量;通过WYKO粗糙度仪从微观上分析了蓝宝石晶体表面的研磨均匀性;最后,应用纳米压入测试分析了亚表面损伤层的深度。实验结果表明：蓝宝石晶体经过120 min的双面研磨加工后可以获得Ra为0.523μm,Rt＆lt;6.0μm的表面;其深度损伤层约为460 nm,亚表面损伤层＆lt;1μm。
英文摘要：
In order to achieve high efficiency and low damaged layers during a sapphire crystal lapping process,an experimental research on the rougness, lapping uniformity and sub-surface damaged layer were studied in this paper. The sapphire with （0001） orientation was lapped by 280 mesh boron car- bide abrasive grits. The effects of lapping time on the material removal rates and surface roughness were investigated, and the processing remainders by the dual-lapping were determined in accordance with the surface states of the sapphire. Then micro-surface uniformity of the sapphire was also presen- ted by using WYKO laser equipment. Finally,a nano-indentation test was carried out to measure the depth of damaged layer according to the hardness or modulus variances. Experimental results show that the sapphire crystal can offer the -Ra in 0. 523μm,R〈6.0 μm, the depth of heavy damaged layer of 460 nm,and the depth of sub-surface damaged layer no more than 1μm, after it is lapped by the ab- rasive with 280 mesh boron carbide grits in 120 min.
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