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Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：033520-
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Zeng, Yuheng1, 2|Ma, Xiangyang1|Chen, Jiahe1|Song, Weijie2|Wang, Weiyan2|Gong, Longfei3|Tian, Daxi3|Yang, Deren1|
同期刊论文项目
大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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