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Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer
  • ISSN号：1862-6300
  • 期刊名称：Physica Status Solidi. A: Applications and Materia
  • 时间：0
  • 页码：990-993
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Jiang, Tingting1|Yu, Xuegong1|Gu, Xin1|Yang, Deren1|Rozgonyi, George2|
同期刊论文项目
大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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