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氧沉淀对直拉硅单晶硬度的影响
  • ISSN号：0258-7076
  • 期刊名称：《稀有金属》
  • 时间：0
  • 分类：TN304.12[电子电信—物理电子学] TN305.94[电子电信—物理电子学]
  • 作者机构：State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 相关基金：This work was supported by the National Natural Science Foundation of China （Nos. 50902122 and 50832006）. Partial support from R＆D Program of Ministry of Education of China （No. 62501040202）, Innovation Team Project of Zhejiang Province, China （No. 2009R50005）, Basic Funding for Research at Zhejiang University, China （No. 2011FZA4005）, and Major Scientific program of Zhejiang Province, China （No. 2009C01024-2） is acknowledged.
作者： 曾徵丹[1], 马向阳[1], 陈加和[1], 杨德仁[1]
关键词： 硅纳米晶, 封装材料, 发光硅, 光致, 外部量子效率, 激发波长, 太阳能电池, 发光二极管, Photoluminescence, Silicon nanocrystals, Epoxy, Silicone, Quantum yield, External quantum efficiency
中文摘要：

Corresponding author. Prof., Ph.D.; Tel.： ＋86 571 87953003; Fax： ＋86 571 87952322; E-mail address： xdpi@zju.edu.cn （X.D. Pi）.

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大直径直拉硅单晶缺陷工程的基础研究
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期刊信息
  • 《稀有金属》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:北京有色金属研究总院
  • 主编：屠海令
  • 地址：北京新街口外大街2号
  • 邮编：100088
  • 邮箱：xxsf@grinm.com
  • 电话：010-82241917 62014832
  • 国际标准刊号：ISSN：0258-7076
  • 国内统一刊号：ISSN：11-2111/TF
  • 邮发代号:82-167
  • 获奖情况:
  • 中文核心期刊,冶金工业类核心期刊,中国科技论文统计源期刊
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  • 被引量:13688