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First-Principles Study of 2.2 nm Silicon Nanocrystals Doped with Boron
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：0
  • 页码：9838-9843
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Pi, Xiaodong|Chen, Xiaobo|Yang, Deren|
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大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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