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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
  • ISSN号：0921-4526
  • 期刊名称：Physica B: Condensed Matter
  • 时间：0
  • 页码：4723-4726
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Rafi J.M.|Vanhellemont J.|Simoen E.|Chen J.|Zabala M.|Campabadal F.|Rafí, J.M.|
同期刊论文项目
大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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