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Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based pr
  • ISSN号：0921-5107
  • 期刊名称：Materials Science and Engineering B-advanced Funct
  • 时间：0
  • 页码：235-238
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Chen J.|Yang D.|Ma X.|Que D.|
同期刊论文项目
大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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