位置：成果数据库 > 期刊 > 期刊详情页
单晶硅片中的位错在快速热处理过程中的滑移
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：TN304.12[电子电信—物理电子学]
  • 作者机构：[1]浙江大学材料科学与工程系,硅材料国家重点实验室,杭州310027
  • 相关基金：国家自然科学基金（批准号：50832006）、国家科技重大专项（批准号：2010ZX02301-003）、浙江省创新团队（批准号：2009R50005）和浙江省自然科学基金（批准号：R4090055）资助的课题.
作者： 徐嶺茂, 高超[1], 董鹏[1], 赵建江[1], 马向阳[1], 杨德仁[1]
关键词： 快速热处理, 位错滑移, 机械性能, 单晶硅, rapid thermal processing, dislocation motion, mechanical properties, silicon wafer
中文摘要：

研究了单晶硅片中维氏压痕诱生的位错在不同气氛下高温快速热处理中的滑移行为．研究表明：在快速热处理时，位错在压痕残余应力的弛豫过程中能发生快速滑移；当快速热处理温度高于1100℃时，在氮气氛下处理的硅片比在氩气氛下处理的硅片有更小的位错滑移距离．我们认为这是由于氮气氛下的高温快速热处理在压痕处注入的氮原子钉扎了位错，增加了位错的临界滑移应力，从而在相当程度上抑制了位错的滑移．可以推断氮气氛下的高温快速热处理注入的氮原子增强了硅片的机械强度．

英文摘要：

We have investigated the motion of dislocations originating from Vicker indentations in single-crystalline silicon wafers subjected to high temperature rapid thermal processing （RTP） under different ambients. It is found that the dislocations move very rapidly due to the release of residual stress around the indentations during the RTP. Moreover, as the RTP temperature exceeds 1100℃, the dislocation gliding distances in the specimens subjected to the RTP in N2 atmosphere are much shorter than in Ar ambient. We believe that the nitrogen atoms injected into the indentation by the RTP under N2 ambient exhibit a pinning effect on dislocation motion. It is thus shown that the high temperature RTP in N2 ambient can improve the mechanical strength of silicon wafer.

同期刊论文项目
大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
同项目期刊论文
Critical role of dopant location for P-doped Si nanocrystals
铜沉淀对直拉硅单晶中洁净区形成的影响
Retarded oxygen diffusion in heavily phosphorus-doped Czochralski silicon: Experiments and first-pri
Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high effic
Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based pr
Effect of oxygen precipitates on dislocation motion in Czochralski silicon
Recent Patenting activities in low-cost silicon raw materials for silicon solar cells
Modulation of atomic-layer-deposited Al2O3 film passivation of silicon surface by rapid thermal proc
The modulation of surface texture for single-crystalline Si solar cells using calibrated silver nano
Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon
Optical absorption and emission of nitrogen-doped silicon nanocrystals
The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen dif
Effect of nickel contamination on grain boundary states at a direct silicon bonded (1 1 0)/(1 0 0) i
Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interf
Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio
Influence of nickel precipitation on the formation of denuded zone in Czochralski silicon
Flow pattern defects in germanium-doped Czochralski silicon crystals
Spin-coating silicon-quantum-dot ink to improve solar cell efficiency
Germanium-doped Czochralski silicon for photovoltaic applications
Effect of oxygen precipitation on the performance of Czochralski silicon solar cells
Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipi
Characterization of a Czochralski grown silicon crystal doped with 10(20) cm(-3) germanium
First-Principles Study of 2.2 nm Silicon Nanocrystals Doped with Boron
Theoretical Study of Chlorine for Silicon Nanocrystals
Investigation of nitrogen behaviors during Czochralski silicon crystal growth
Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped si
Transmission electron microscopy investigation of the micro-defects in Czochralski silicon
Suppression of boron-oxygen defects in p-type Czochralski silicon by germanium doping
Efficiency improvement of silicon solar cells enabled by ZnO nanowhisker array coating
Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-dope
Crystal growth of indium-doped czochralski silicon for photovoltaic application
Fluorine-passivated silicon nanocrystals: Surface chemistry versus quantum confinement
Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
Lightly boron and phosphorus co-doped silicon nanocrystals
Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensati
Effect of Ge doping on the kinetics of iron-boron pair association and dissociation in photovoltaic
Effect of dopant compensation on the performance of Czochralski silicon solar cells
Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer
Performance of silicon nanowire solar cells with phosphorus-diffused emitters
First-principles study on the surface chemistry of 1.4 nm silicon nanocrystals: Case of hydrosilylat
Dislocation-induced variation of generation kinetics of boron-oxygen complexes in silicon
Thin Czochralski silicon solar cells based on diamond wire sawing technology
Influence of the compensation level on the performance of p-type crystalline silicon solar cells: Th
Quantitative study of the evolution of oxygen and vacancy complexes in czochralski silicon
硅中缺陷对Cu杂质的吸杂
CdS纳米颗粒掺杂对ZnO气敏性能的影响
氧沉淀对直拉硅单晶硬度的影响
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国科学引文索引（扩展库）,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:49876