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Critical role of dopant location for P-doped Si nanocrystals
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：0
  • 页码：661-666
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Chen, Xiaobo1|Pi, Xiaodong1|Yang, Deren1|
同期刊论文项目
大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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