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Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：0
  • 页码：8774-8781
  • 相关项目：大直径直拉硅单晶缺陷工程的基础研究
作者： Chen X.|Pi X.|Yang D.|
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大直径直拉硅单晶缺陷工程的基础研究
期刊论文 78 会议论文 10 专利 8
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