分别在常压和高压下利用固相反应法制备了Mg1.05-x(HgO)xB2多晶样品,并研究了HgO掺杂对MgB2样品性能的影响。在两种不同的反应条件下制备的样品,超导转变温度随掺杂量的增大都有一定幅度的下降,但晶体结构和临界电流密度(Jc)则有显著的不同。常压下HgO掺杂可使Jc降低,而高压下一定量的掺杂则使Jc增大。由扫描电镜结果分析可得,高压下制备的样品晶粒间联系紧密,尺寸较小,从而使其临界电流密度、不可逆场和钉扎力等性能都优于常压下制备的样品。
Polycrystalline Mg1.05-x(HgO)xB2 alloys have been prepared by solid state reaction under high and ambient pressures. We studied the effect of HgO addition on the characteristic of MgB2. The transition temperatures Tc were slightly dropped by HgO doping, but the structure and the critical current density Jc were obviously changed. The Jc was significantly enhanced for the samples prepared under high pressure, but decreased for the ones under ambient pressure. According to the results of SEM, the samples sintered under high pressure have smaller crystal size and good grain connection, and these can be recognized to produce an effective flux pinning center and then to enhance the Jc, Hirr and Fpmax.