利用直流磁控溅射法在普通钠钙玻璃(SLG)衬底上沉积双层Mo薄膜,对不同条件下沉积的薄膜通过X射线衍射(XRD)仪、扫描电子显微镜(SEM)、四探针电阻仪等对其相结构、表面形貌以及电性能进行测试.结果表明:双层Mo薄膜呈体心立方结构;由于非晶玻璃基底的影响以及沉积时间较短,缓冲层结晶质量差,薄膜表面粗糙,有空洞、裂纹,电阻率大,随温度的升高电阻率减小,薄膜表现出半导体的特性.随着顶层薄膜(溅射工作气压0.1 Pa)沉积时间的增加,薄膜厚度增加,结晶性能变好,表面更加平整、致密,总体电阻率变小,导电性能提高,随温度的升高电阻率增大,薄膜表现出金属特性.与单层膜相比,双层膜具有更低的电阻率,且溅射时间短,厚度薄,能够降低成本,节省源材料,更符合CIGS电池背电极的需求.
Molybdenum (Mo) bilayer thin films were deposited on soda-lime glass using DC magnetron sputtering process.The structure,morphology,and electrical properties of Mo films have been studied by XRD,SEM,four-probe tester,etc.The results show that all bilayer films exhibit a body-centered cubic structure.The buffer layer with rough surface and many defects is initially made on the substrate,whose R-T relationship reflects the characteristics of the semiconductor.The resistivity of the thin film decreases with the top layer's deposition time increasing.In addition,the R-T relationship of these films shows a metal feature.Compared with the monolayer film,bilayer films have lower resistivity and shorter sputtering time,so it greatly satisfies the requirement of CIGS solar cell back electrode.