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中文摘要：
利用射频磁控溅射制备了Al掺杂的ZnO（AZO）薄膜,通过X线衍射（XRD）、原子力显微镜（AFM）及四探针等手段对薄膜进行了表征,研究了不同热处理温度对AZO薄膜的形貌、结构和电学性能的影响。研究表明,Al的掺杂体积分数约为1.2%,随着热处理温度的升高,薄膜颗粒大小均匀,AZO薄膜衍射峰强度先增强后减弱,当热处理温度为450℃时,该AZO薄膜的结晶性最好,电阻率最小为0.024 7Ω·cm。
英文摘要：
The Al-doped ZnO （AZO） films were prepared by the RF magnetron sputtering method. The AZO films were characterized by X-ray diffraction, atomic force microscopy, four probes. The effects of different heat treatment temperature on the morphology, structure and electrical properties of AZO thin films were investigated. The results showed that the film particles were uniform and the diffraction peak intensity of AZO film was first en-hanced and then weakened with the increase of the heat treatment temperature when the A1 doping volume fraction was about 1.2%. When the heat treatment temperature was 450℃,the crystallinity of the AZO film was the best and the minimum resistivity was 0. 024 7 Ω·cm.
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