位置：成果数据库 > 期刊 > 期刊详情页
Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuit
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2014.3
  • 页码：-
  • 相关项目：三维集成电路的TSV模型及热管理技术研究
作者： Zhu Zhang-Ming|Xia Yin-Shui|Ding Rui-Xue|Yang Yin-Tang|
同期刊论文项目
三维集成电路的TSV模型及热管理技术研究
期刊论文 21
同项目期刊论文
Performance analysis of single-walled carbon nanotube bundle interconnects for three-dimensional int
Reduction of Signal Reflection in High-Frequency Three-Dimensional (3D) Integration Circuits
Capacitance Characterization of Tapered Through-Silicon-Via Considering MOS Effect
Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV)
Type of distortionless through silicon via design based on the multiwalled carbon nanotube
Circuit modeling and performance analysis of SWCNT bundle 3D interconnects
Analytical models for the thermal strain and stress induced by annular through-silicon-via (TSV)
An Effective Approach of Reducing the Keep-Out-Zone Induced by Coaxial Through-Silicon-Via
考虑MOS效应的锥型硅通孔寄生电容解析模型
Accurate Formulas for the Capacitance of Tapered-Through Silicon Vias in 3-D ICs
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional
Temperature properties of the parasitic resistance of through-silicon-vias (TSVs) in high-frequency
Thermo- mechanical characterization of single-walled carbon nanotube (SWCNT)-based through-silicon v
A Model of Air-Gap Through- Silicon Vias (TSVs) for Millimeter Application
Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias
Influence of Temperature on the Conductivity of Multiwalled Carbon Nanotube Interconnects
Metal Proportion Optimization of Annular Through-Silicon Via Considering Temperature and Keep-Out Zo
Parasitic Inductance of Non-uniform Through-Silicon Vias (TSVs) for Millimeter Application
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips
Structural, Elastic, and Electronic Properties of a New Phase of Carbon
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406