位置：成果数据库 > 期刊 > 期刊详情页
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional
  • ISSN号：1674-4926
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2014.1
  • 页码：015008-1-015008-8
  • 相关项目：三维集成电路的TSV模型及热管理技术研究
作者： Zhu Zhangming|Yang Yintang|Wang Fengjuan|Ding Ruixue|
同期刊论文项目
三维集成电路的TSV模型及热管理技术研究
期刊论文 21
同项目期刊论文
Performance analysis of single-walled carbon nanotube bundle interconnects for three-dimensional int
Reduction of Signal Reflection in High-Frequency Three-Dimensional (3D) Integration Circuits
Capacitance Characterization of Tapered Through-Silicon-Via Considering MOS Effect
Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV)
Type of distortionless through silicon via design based on the multiwalled carbon nanotube
Circuit modeling and performance analysis of SWCNT bundle 3D interconnects
Analytical models for the thermal strain and stress induced by annular through-silicon-via (TSV)
An Effective Approach of Reducing the Keep-Out-Zone Induced by Coaxial Through-Silicon-Via
考虑MOS效应的锥型硅通孔寄生电容解析模型
Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuit
Accurate Formulas for the Capacitance of Tapered-Through Silicon Vias in 3-D ICs
Temperature properties of the parasitic resistance of through-silicon-vias (TSVs) in high-frequency
Thermo- mechanical characterization of single-walled carbon nanotube (SWCNT)-based through-silicon v
A Model of Air-Gap Through- Silicon Vias (TSVs) for Millimeter Application
Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias
Influence of Temperature on the Conductivity of Multiwalled Carbon Nanotube Interconnects
Metal Proportion Optimization of Annular Through-Silicon Via Considering Temperature and Keep-Out Zo
Parasitic Inductance of Non-uniform Through-Silicon Vias (TSVs) for Millimeter Application
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips
Structural, Elastic, and Electronic Properties of a New Phase of Carbon
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754