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Capacitance Characterization of Tapered Through-Silicon-Via Considering MOS Effect
  • ISSN号：0026-2692
  • 期刊名称：Microelectronics Journal
  • 时间：0
  • 页码：-
  • 相关项目：三维集成电路的TSV模型及热管理技术研究
作者： Zhangming Zhu|Yintang Yang|Xiaoxian Liu|Ruixue Ding|
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三维集成电路的TSV模型及热管理技术研究
期刊论文 21
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