用直流磁控溅射法在(100)LaAlO3衬底上制备了La0.9Sr0.1MnO3薄膜,经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量,电阻率-温度关系表明La0.9Sr0.1MnO3薄膜在281K处发生金属绝缘体转变,电流在0.01-4 mA范围内,薄膜的峰值电阻率随电流增大而减小,在4mA下获得了30.5%的峰值电阻率变化率,并从相分离图像给出了简单解释。
La0.9Sr0.1MnO3 film has been fabricated on (100) LaAIO3 by direct-current magnetren sputtering. The quality of the film is good as monitored by atom force microscopy and X-ray diffraction. The resistivity-temperature curve shows that the film undergoes metal-insulator transition at 281 K. The peak resistivity decreases with increasing current and the current-induced electro- resistance is 30.5 % at 4 mA. The results are simply explained by phase-separation theory.