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中文摘要：
采用射频磁控溅射技术在Si（111）衬底上制备了未掺杂ZnO薄膜和Nd及其与Fe,Mn共掺杂ZnO薄膜.通过XRD分析表明,未掺杂ZnO薄膜沿c轴择优生长,掺杂ZnO薄膜偏离了正常生长,薄膜为纳米多晶结构.应用AFM观测所有薄膜的表面形貌,掺杂使ZnO薄膜表面粗糙.室温光致发光谱显示,薄膜出现了395nm的强紫光和495 nm的弱绿光带.Nd掺杂ZnO薄膜的PL谱线峰值强度减弱,Nd与Fe,Mn共掺杂ZnO薄膜的PL谱线峰值强度增强,分析了掺杂引起PL峰强度变化的原因.
英文摘要：
The un-doped ZnO thin film and metal co-doped ZnO （ZnO dopetron sputtering. The films were analyzed by XRD and AFM, the results indicate that the un-doped ZnO thin films were apt to grow in caxis orientation, but the co-doped ZnO thin films were nano-multi-crystal which deviate from its normal growth direction. Besides, the thin films were also studied by the AFM,it was found that owing to the doped process the surfaces were rough. The PL spectrum indicated that the thin films have strong purple peak at 395 nm and weak green peak at 495 nm. The PL spectrum peak intensity of co-doped ZnO thin films were also changed. The results showed that the peak of Nd-doped ZnO thin films were weakened but the Nd and other transition-metal （Fe and Mn） co-doped ZnO thin films were strengthened,in the last it is given the causes of PL peak intensity change.
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