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Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.4.4
  • 页码：-
  • 相关项目：无浸润层的氮化铟镓量子点生长机理和物性研究
作者： Hu, Jiannan|Hao, Zhibiao|Niu, Lang|E, Yanxiong|Wang, Lai|Luo, Yi|
同期刊论文项目
无浸润层的氮化铟镓量子点生长机理和物性研究
期刊论文 42 会议论文 2
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