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Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2013.8.8
  • 页码：-
  • 相关项目：无浸润层的氮化铟镓量子点生长机理和物性研究
作者： Lv, Wenbin|Wang, Lai|Wang, Jiaxing|Xing, Yuchen|Zheng, Jiyuan|Yang, Di|Hao, Zhibiao|Luo, Yi|
同期刊论文项目
无浸润层的氮化铟镓量子点生长机理和物性研究
期刊论文 42 会议论文 2
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