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中文摘要：
制作了栅极修饰金属Pt的AlGaN／GaN高电子迁移率晶体管结构的氢气传感器。栅极Pt采用溅射的方法制作，主要起到形成肖特基接触并催化氢气裂解的作用。器件的栅极敏感区域尺寸为5μm×400μm，对常温下氢气浓度为2×10-6至6216×10-6的氢气／氮气混合气进行了检测。结果表明，在VCS=-1．5V，VDS=1V的工作偏压下，10倍的氢气浓度变化平均引起33．9％的灵敏度变化量。同时，器件对2×10-6的氢气具有6．3％的灵敏度，表现出了具有竞争力的低浓度检测极限。
英文摘要：
A novel type of hydrogen sensors was developed, based on the AlGaN/GaN high electron mobility transistor （HEMT） structure with Pt-decorated gate. The sputtered Pt-gate acts as the Schottky contact, and catalyzes dissociation of molecular hydrogen. The sensing area of the Pt gate covers 5 μm×400 μm, and its sensing c ＇haracteristics were evaluated with a mixture of hydrogen and nitrogen, with hydrogen concentration varying from 2×10- 6 to 6216 ×10- 6. The results show that an increase of hydrogen concentration by one order of magnitude changes the average sensitivity of the sensor by 33.9% ,when biased at VGS = - 1.5 V and VDS = 1.0 V. The fact that its sensitivity is 6.3% at 2×10-6 of hydrogen shows that it outperforms the conventional hydrogen sensors when it comes to the low detection limit of hydrogen.
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