东篱科研大数据发现系统（DRDS）

位置：成果数据库 > 期刊 > 期刊详情页

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
分类：TN325.3[电子电信—物理电子学] TS106.62[轻工技术与工程—纺织工程;轻工技术与工程—纺织科学与工程]
作者机构：[1]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60776051, 61006059 and 61006044）, the Beijing Municipal Natural Science Foundation, China （Grant No. 4082007）, and the Beijing Municipal Education Committee, China （Grant Nos. KM200710005015 and KM200910005001）.

作者：陈亮[1], 张万荣[1], 金冬月[1], 沈佩[1], 谢红云[1], 丁春宝[1], 肖盈[1], 孙博韬[1], 王任卿[1]

关键词： SIGE异质结双极晶体管, 高热稳定性, 非均匀性, 功率器件, 手指, 间距, 功耗, 异质结双极型晶体管, heterojunction bipolar transistor, thermal coupling, power dissipation

中文摘要：

A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations.Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model.The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation.What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases.So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device.Experimental results verify our conclusions.

英文摘要：

A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.

同期刊论文项目