欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
基于半导体器件仿真工具SILVACOTCAD，研究了三种常见的基区Ge组分分布（矩形、梯形和三角形）对多指功率SiGe异质结双极型晶体管（HBT）的热学特性的影响。结果表明，基区Ge组分为梯形分布和三角形分布的多指SiGeHBT的增益随温度变化比较平缓，各发射极指的峰值温度明显小于矩形分布的各指峰值温度，器件纵向和表面温度分布也更加均匀，因此，与矩形分布相比，梯形分布和三角形分布的多指SiGeHBT在热学特性上有了很大的改善，电学特性也相对热稳定。在这三种结构中，梯形分布可以更好地兼顾增益特性和热学特性。
英文摘要：
The effects of three kinds of Ge profile （box, trapezoidal and triangular Ge-profile） in the base region on thermal characteristics of multi-finger SiGe heterojunction bipolar transistors （HBTs） were investigated by using of SILVACO TCAD simulator. It is found that the variation of gain for SiGe HBTs with the trapezoidal or triangular Ge profile in the base region is slower with the increase of temperature and the peak temperature at the each emitter finger is lower than that for multi-finger SiGe HBT with the box Ge profile. The surface temperature distribution of these two devices is more uniform. Therefore, the thermal characteristics of the SiGe HBTs with the trapezoidal or triangular Ge profiles are improved obviously, the electronic characteristics are more thermally stable. Besides, the trapezoidal Ge profile can make a better trade-off for the requirement of Ge profile between the gain characteristics and the thermal characteristics.
同期刊论文项目
同项目期刊论文
Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor unde
Effect of bandgap engineering on thermal characteristic of radio frequency power SiGe heterojunction
Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger
Improving the quality factor of an RF spiral inductor with non-uniform metal width and non-uniform c
Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide
Simultaneous optimization of Ge doping profile and layout in multi-finger power SiGe HBTs for high t
Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achiev
An inductorless high linear UWB Cascode LNA with tunable active resistance feedback and post-lineari
期刊信息
位置：