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中文摘要：
详细地分析了Cascode结构的线性度和3dB带宽，利用Cascode结构的高线性度和Darlington结构的高增益的优点构成了Darlington—Cascode结构，在此基础上，基于台积电TSMC0．35μm SiGe工艺，设计了一款芯片面积小的满足超宽带（UWB）标准的无电感SiGe异质结双晶体管（HBT）低噪声放大器（LNA）。该放大器利用电阻反馈结构替代了电感-电容（LC）匹配网络结构，实现了输入、输出阻抗匹配，未采用无源电感，节省了芯片面积，芯片面积仅为0．046mm2，并将Darlington—Cascode结构作为LNA的输出级，既提高了增益，又提高了线性度。LNA版图仿真结果表明，在UWB频带范围内，LNA的增益为19．5～20dB，增益平坦度为4-0．25dB；输入、输出匹配良好；线性度为-5- -2dBm；在整个频段内，无条件稳定。
英文摘要：
Based on the Taiwan Semiconductor Manufactory Company （TSMC） ＇ s 0. 35μm silicon germanium （SiGe） process, an inductorless, small chip area SiGe heterojunction bipolar transistor（HBT） low-noise amplifier （LNA） for Ultra-wideband （UWB） application was designed. The input impedance matching and the output impedance matching of the LNA are both achieved by using the resistance feedback structure instead of the LC matching net-work structure in order to save the chip area. And the LNA uses the Darlington-Cascode structure as its output stage to improve its gain and linearity because the structure has the advantage of high linearity of Cascode and the advan- tage of high gain of Darlington. The Darlington-Cascode structure was constructed based on the analysis of the linearity and 3-dB bandwidth of Cascode. The topology and the chip layout of the LNA were designed, with its area being only 0. 046mm2. The simulation results of the LNA demonstrate that in the range of UWB, the gain of a LNA is 19.5 - 20 dB, the gain flatness is ± 0.25dB, the linearity is -5 - -2dBm, with the satisfactory input impedance matching and the output impedance matching. The LNA is unconditionally stable in the whole band.
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