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中文摘要：
Compared with BVceo,BVces is more related to collector optimization and more practical significance,so that BVces×fT rather than BVceO×fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design.Instead of a single decrease in collector doping to improve BVces×fT and BVceo×fT,a novel thin composite of N- and P~+ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT,and BVces and BVceo are improved respectively with slight degradation in fT.As a result,the BVces×fT product is improved from 537.57 to 556.4 GHz·V,and the BVceo×fT product is improved from309.51 to 326.35 GHz·V.
英文摘要：
Compared with BVcEo, BVcEs is more related to collector optimization and more practical significance, so that BVcEs × fT rather than BVcEo ×fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVcEs × fT and BVcEo × fT, a novel thin composite of N- and P＋ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT, and BVCES and BVCEO are improved respectively with slight degradation in fTAs a result, the BVcEs × fT product is improved from 537.57 to 556.4 GHz.V, and the BVcEo ×fT product is improved from 309.51 to 326.35 GHz.V.
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