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Impact of program/erase operation on the performances of oxide-based resistive switching memory
  • ISSN号：1931-7573
  • 期刊名称：Nanoscale Research Letters
  • 时间：2015.2.5
  • 页码：-
  • 相关项目：新型微电子器件集成的基础研究
作者： Xu, Xiaoxin|Liu, Hongtao|Yang, Baohe|Liu, Ming|
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新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
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