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Investigation of charge loss characteristics of HfO2 annealed in N2 or O2 ambient
  • ISSN号：0253-4177
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2014
  • 页码：-
  • 相关项目：新型微电子器件集成的基础研究
作者： Chen, Guoxing|Zhang, Dong|Li, Xinkai|Liu, Ming|
同期刊论文项目
新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
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