位置：成果数据库 > 期刊 > 期刊详情页
一种MIMO-OFDM系统信道估计简化方法
  • ISSN号：1004-373X
  • 期刊名称：《现代电子技术》
  • 时间：0
  • 分类：TN929.5[电子电信—通信与信息系统;电子电信—信息与通信工程]
  • 作者机构：[1]中国科学院 微电子研究所 通信与多媒体SoC研究室,北京100029
  • 相关基金：国家自然科学基金项目（61201265，61221004和61376027）支持
作者： 张朝龙[1], 邱昕[1], 陈杰[1]
关键词： MIMO-OFDM, 信道估计, TBT, 快速求解算法, MIMO-OFDM, channel estimation, TBT, fast solution method
中文摘要：

提出了一种基于MMSE准则的MIMO-OFDM系统信道估计简化方法.该方法将信道估计问题转化为TBT线性方程求解问题,然后利用快速求解算法避免了复杂的矩阵求逆和矩阵相乘,大大降低了实现复杂度.仿真结果表明,相比于传统MMSE算法,该简化算法在降低复杂度的同时仅带来微弱的性能损失.

英文摘要：

A simplified channel of estimation method for MIMO-OFDM（multiple input multiple output - orthogonal frequen-cy division multiplexing）systems based on MMSE（minimum mean square error）criteria is proposed,which translated the prob-lem of channel estimation into the finding out the solution of TBT（Toeplitz-block-Toeplitz） nonlinear equations. And then com-plex operation of matrix inverse and matrix multiplication can be avoided with fast solution method,which greatly reduced the computation complexity of channel estimation. Simulation results show that,compared with traditional MMSE channel estimation method,the proposed simplified method can reduce computation complexity efficiently with small performance degradation.

同期刊论文项目
新型微电子器件集成的基础研究
期刊论文 98 会议论文 12
基于低密度奇偶校验码的压缩感知系统设计与实现
期刊论文 7
多进制LDPC码的线性规划译码方法研究
期刊论文 9 会议论文 1
同项目期刊论文
Response to "Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filam
A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time
Limitation of the concept of transport energy in disordered organic semiconductors
Universal carrier thermoelectric-transport model based on percolation theory in organic semiconducto
A model for the set statistics of rram inspired in the percolation model of oxide breakdown
Morphological control of GaAs/InAs radial heterostructure nanowires: From cylindrical to coherent qu
Combining Bottom-Up and Top-Down Segmentation: A Way to Realize High-Performance Organic Circuit
Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure (vol 105,
Physical model for electroforming process in valence change resistive random access memory
Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Fil
Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transisto
Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
Field effect mobility model in oxide semiconductor thin film transistors with arbitrary energy distr
Multi-scale quantum point contact model for filamentary conduction in resistive random access memori
Investigation of charge loss characteristics of HfO2 annealed in N2 or O2 ambient
Effects of interfacial fluorination on performance enhancement of high-k-based charge trap flash mem
Investigation on the RESET switching mechanism of bipolar Cu/HfO 2/Pt RRAM devices with a statistica
Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices
Set statistics in CBRAM device with Cu/HfO2/Pt structure
Uniformity improvement in 1T1R RRAM with gate voltage ramp programming
Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors
Comparison between N2 and O2 anneals on the integrity of an Al2O3/Si3N4/SiO 2/Si memory gate stack
Three-state resistive switching in HfO2-based RRAM
Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-
Physical origin of nonlinear transport in organic semiconductor at high carrier densities
Universal description of exciton diffusion length in organic photovoltaic cell
Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic
Analytical surface-potential compact model for amorphous-IGZO thin-film transistors
Comparison between N-2 and O-2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack
Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access
Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charg
Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory
A simple and accurate method for measuring program/erase speed in a memory capacitor structure
Quantum-size effects in hafnium-oxide resistive switching
Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochem
Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm)
Improving resistance uniformity and endurance of resistive switching memory by accurately controllin
Impact of program/erase operation on the performances of oxide-based resistive switching memory
Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Ra
Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays
Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory
Polaron effect dependence of thermopower in organic semiconductors
Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure
Thermoelectric Seebeck effect in oxide-based resistive switching memory
Charge carrier relaxation model in disordered organic semiconductors
A capacitor-free high PSR CMOS low dropout voltage regulator
Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-Based RRAM
In situ electron holography study of charge distribution in high-k charge-trapping memory
嵌入式闪存器件技术进展
Modified Transmission Line Model for Bottom-Contact Organic Transistors
Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling Barrier
Investigation of Charge Loss Mechanism of Thickness-Scalable Trapping Layer by Variable Temperature
Compact model for organic thin-film transistor with Gaussian density of states
Investigation of LRS dependence on the retention of HRS in CBRAM
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based res
An overview of the switching parameter variation of RRAM
Short-circuit current model of organic solar cells
In situ electron holography study of charge distribution in high-kappa charge-trapping memory
Operation methods of resistive random access memory
Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory a
基于层次化片上网络的混合多播路由算法
基于多核处理器的多层感知神经网络设计和实现
一种改进的北斗卫星信号并行捕获方法
适用于IEEE802.11a/g的联合信道估计和均衡算法
硅纳米晶存储器的耐受性研究
基于短时相关和FFT的GPSL2C信号捕获算法
一种基于中频回放的跟踪通道设计与实现
适用于SBAS和Galileo卫星导航接收机的Viterbi译码器实现
一种新型的基于效用函数的LTE-A系统预编码资源调度算法
一种改进的北斗卫星信号并行捕获方法
适用于IEEE802.11a/g的联合信道估计和均衡算法
一种基于中频回放的跟踪通道设计与实现
适用于SBAS和Galileo卫星导航接收机的Viterbi译码器实现
适用于BOC（m,n）信号的无模糊捕获技术
一种新型的基于效用函数的LTE-A系统预编码资源调度算法
On the Minimum Distance of Full-Length RS-LDPC Codes
Quasi-Cyclic Representation and Vector Representation of RS-LDPC Codes
More on the Minimum Distance of Array LDPC Codes
一种适用于3GPP LTE下行链路的低复杂度信道估计算法
On the Minimum-Weight Codewords of Array LDPC Codes with Column Weight 4
A Parallelized Implementation of Turbo Decoding Based on Network on Chip Multi-core Processor
适用于IEEE802.11a/g的联合信道估计和均衡算法
一种新型的基于效用函数的LTE-A系统预编码资源调度算法
期刊信息
  • 《现代电子技术》
  • 北大核心期刊（2014版）
  • 主管单位:陕西省信息产业厅
  • 主办单位:陕西电子杂志社 陕西省电子技术研究所
  • 主编：张郁（执行）
  • 地址：西安市金花北路176号陕西省电子技术研究所科研生产大楼六层
  • 邮编：710032
  • 邮箱：met@xddz.com.cn
  • 电话：029-93228979
  • 国际标准刊号：ISSN：1004-373X
  • 国内统一刊号：ISSN：61-1224/TN
  • 邮发代号:52-126
  • 获奖情况:
  • 中国科技核心期刊
  • 国内外数据库收录:
  • 波兰哥白尼索引,中国中国科技核心期刊,中国北大核心期刊（2014版）
  • 被引量:37245